0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol value unit collector-emitter voltage (base shorted) bc807 ? ces 50 v bc808 30 collector-emitter voltage (base open) bc807 ? ceo 45 v bc808 25 emitter-base voltage ? ebo 5v collector current i c 800 ma peak collector current i cm 1000 ma peak base current i bm 200 ma peak emitter current i em 1000 ma power dissipation at t sb = 50 ?c p tot 310 (1) mw thermal resistance junction to ambient air r q ja 450 (1) ?/w thermal resistance junction to substrate backside r q sb 320 (1) ?/w junction temperature t j 150 ? storage temperature range t s 65 to +150 ? note: (1) device on fiberglass substrate, see layout on next page. bc807, bc808 small signal transistors (pnp) 3/20/01 dimensions in inches and (millimeters) .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) features ?pnp silicon epitaxial planar transistors for switching, af driver and amplifier applications. ?especially suited for automatic insertion in thick and thin-film circuits. these transistors are subdivided into three groups (-16, -25, and -40) according to their current gain. as complementary types, the npn transistors bc817 and bc818 are recomended. to-236ab (sot-23) mechanical data case: sot-23 plastic package weight: approx. 0.008 grams marking bc807-16 = 5a bc808-16 = 5e codes: -25 = 5b -25 = 5f -40 = 5c -40 = 5g packaging codes/options: e8/10k per 13?reel (8mm tape), 30k/box e9/3k per 7?reel (8mm tape), 30k/box mounting pad layout pin configuration 1 = base 2 = emitter 3 = collector
electrical characteristics (t j = 25? unless otherwise noted) parameter symbol test condition min typ max unit dc current gain current gain group 16 v ce = 1v, i c = 100ma 100 250 ?5 h fe 160 400 40 250 600 ? ce = 1v, i c = 500ma 40 collector saturation voltage ? cesat ? c = 500ma, i b = 50ma 0.7 v base saturation voltage v besat ? c = 500ma, i b = 50ma 1.3 v base-emitter voltage ? beon ? ce = 1v, i c = 500ma 1.2 v collector-base cutoff current ? cbo ? cb = 20v 100 na ? cb = 20v, t j = 150? 5 m a emitter-base cutoff current ? ebo ? eb = 4 v 100 na gain-bandwidth product f t ? ce = 5v, i c = 10ma 100 mhz f = 50 mhz collector-base capacitance c cbo v cb = 10v, f = 1 mhz 12 pf note: (1)device on fiberglass substrate, see layout. 0.59 (15) 0.2 (5) 0.03 (0.8) 0.30 (7.5) 0.12 (3) .04 (1) 0.06 (1.5) 0.20 (5.1) .08 (2) .08 (2) .04 (1) 0.47 (12) dimensions in inches (millimeters) layout for r q ja test thickness: fiberglass 0.059 in. (1.5 mm) copper leads 0.012 in. (0.3 mm) bc807, bc808 small signal transistors (pnp)
bc807, bc808 small signal transistors (pnp)
bc807, bc808 small signal transistors (pnp)
bc807, bc808 small signal transistors (pnp)
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